![[Analysis Case] Quality Evaluation of SiC Substrates](https://image.mono.ipros.com/public/product/image/f78/2000245729/IPROS70334881595004673622.jpeg?w=280&h=280)
[Analysis Case] Quality Evaluation of SiC Substrates
Evaluation of crystal orientation, in-plane defect distribution, surface roughness, and impurities.
SiC power devices are expected to reduce power loss and handle high power in a compact form as power conversion elements. The quality evaluation of SiC substrates, which is necessary for manufacturing these devices, has become a challenge. We propose a method to evaluate and quantify the crystal orientation, in-plane defect distribution, surface roughness, and impurities of SiC substrates, as well as to visualize these factors. Measurement methods: XRD, AFM, PL, SIMS Product fields: Power devices, lighting Analysis purposes: Trace concentration evaluation, structural evaluation, shape evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.
- Company：一般財団法人材料科学技術振興財団 MST
- Price：Other
